Abstract
We report the use of a novel impurity free vacancy disordering technique which has been used to produce waveguides with different Kerr-type nonlinear coefficients. The technique relies on standard SiO2 dielectric caps to promote disordering and Ga2O3 caps to suppress disordering. Band-gap shifts of around 40 nm and consequent changes in n2 of more than 60% are reported.
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