Abstract
We have studied exciton localization and its stimulated emission in InGaN multiple quantum wells at 2K. Mobility edge was determined by the use of site-selectively excited photoluminescence (PL) measurement. A time-resolved PL spectroscopy was performed to study exciton relaxation processes. The PL decay time increased with the decrease of the detection photon energy, indicating the dynamical features of exciton localization. Under the high-density excitation, we observed the localized exciton luminescence turned into the stimulated emission just below the mobility edge. In addition, a nonlinear luminescence measurement was performed to study the detailed optical property of the stimulated emission.
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