Abstract
The role of localized defects as they pertain to ferromagnetism in SiC, which contains only s and p electrons, is important but unclear. Here, room temperature, macroscopic magnetization is induced and can be tuned in 6H-SiC using 14N+ ion implantation. First-principles density functional theory computation results confirm that 14N+ ion implantation can enhance the ferromagnetic ordering of the local magnetic moments caused by vacancy and substitution defects. The calculated magnetization values in the energetically favored ferromagnetic ordering (1.47–2.93emu/g for several vacancy and substitution defects) are larger than our experimental values (0.25emu/g at 5K and 0.08emu/g at 300K), but the result is qualitatively in agreement.
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