Abstract
Recent progress in experimental and theoretical studies of localized defects in semiconductors is reviewed. Most of the present information on localized defects has been obtained from electron paramagnetic resonance and optical absorption measurements. In addition, new innovative experimental approaches, such as isotopic ion implantation, ion implantation damage production, depth distribution measurements of specific defects, and channeling techniques, are contributing greatly to current progress in understanding defects. Computational studies which complement the experimental studies are also discussed.
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