Abstract
We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures > ~ 40 K, whereas it becomes positive for low temperatures ≤ ~ 40 K, which implies an interplay of quantum interferences in Dirac materials. The elastic scattering mechanism in hBN/Gr/hBN stacks contrasts with that of conventional graphene on SiO2, and our ultra-clean graphene device shows nonzero magnetoconductance for high temperatures of up to 300 K.
Highlights
We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride layers, i.e., hBN/Gr/hBN stacks
This phenomenon is known as Anderson localization (AL) and its precursor, weak localization (WL) has been studied for a long time[1,2,3,4]
Tikhonenko et al reported that the magnetoconductance (MC) in graphene shows positive values for low temperatures, i.e., WL, while the MC is negative for high temperatures, i.e., W AL18
Summary
We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. The interference effects in graphene depend on phase-breaking inelastic scattering, and several types of elastic scattering. Tikhonenko et al reported that the magnetoconductance (MC) in graphene shows positive values for low temperatures, i.e., WL, while the MC is negative for high temperatures, i.e., W AL18.
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