Localization of the impurity atoms in single-crystals using the oscillations of the rutherford backscattering yield in planar channeling

Abstract

The non-equilibrium distribution of channeled 4He + ions along single-crystal planes gives rise to oscillations of the backscattering yield in surface layers. Similar oscillations are also observed in the spectra of particles scattered by heavy impurities distributed uniformly throughout the crystal depth. In the present work, the depth distributions of particles at various initial angles of incidence onto a crystal are studied. It is shown that the impurity atoms can be localized using the non-equilibrium ion flux in planar channeling when the crystal layer depth is of the order of the oscillation half wavelength. Experiments on the location of Sb atoms in the silicon lattice are performed.