Abstract
Localization of implanted boron impurities at the nodes and interstitial of silicon depending on the implantation current density has been studied by the X-ray diffraction and astrophysical methods. A shares of the impurity at the lattice sites increases with growing current density due to the instantaneous vacancy concentration and suppression of the impurity displacement from the sites by silicon interstitial.
Highlights
The observed change in the lattice constant of silicon as a result of implantation is determined by two Localization of implanted impurities at the lattice is factors: by radiation defects causing an increase in determined by its interaction with point radiation- lattice constant and by boron atoms which compress the induced defects
There is a significant divergence in the opinions of various authors as to the quantity of boron at silicon lattice sites immediately following the implantation at room temperature, the Figure 1 shows the dependence of a change in lattice constant (∆α) in a silicon layer following the implantation of B ions with a dose of 1.8⋅1015 cm−2 on the ion beam current density jef
This paper studies the effect exerted by the implantation current density on localization of the implanted boron impurity in silicon
Summary
The observed change in the lattice constant of silicon as a result of implantation is determined by two Localization of implanted impurities at the lattice is factors: by radiation defects causing an increase in determined by its interaction with point radiation- lattice constant and by boron atoms which compress the induced defects. Curve 3 illustrates the lattice constant recovery in heavily boron-doped silicon (ρ0 = 0.005 Ω⋅cm) and within silicon implanted with boron ions (B+) with a current density (jef) of 0.2 μA⋅cm−2. “reverse” annealing stages at 120 and 480°C (curve 2) for high ion current density jef = 2 μA⋅cm−2.
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