Localization of dislocation‐related luminescence centers in self‐ion implanted silicon and effect of additional boron ion doping

Abstract

AbstractThe depth distribution of light‐emitting centers of the D1 dislocation‐related photoluminescence line (∼ 1.5 μm) in silicon implanted with Si+ ions and annealed at 1100 °C in the oxidizing chlorine‐containing atmosphere has been investigated by means of the layer‐by‐layer chemical etching. It is established with the application of cross‐sectional transmission electron microscopy that the main contribution to the D1 line is made by the centers located at the depths of up to ∼ 150 nm, i.e. in the region of Si+ ion ranges, whereas the dislocations produced by Si+ implantation and annealing at 1100 °C penetrate to the depth of ∼ 1000 nm. Additional boron ion doping with subsequent annealing at 800 °C in N2 atmosphere improves the emission in comparison with the undoped but annealed reference sample, however the additional annealing at 800 °C per se results in the photoluminescence weakening. The dependence of the D1 line intensity on boron ion dose is found to be nonmonotonous. The interpretation of the obtained results is given in relation to the key role of selfinterstitials and boron impurity in the formation of radiative and nonradiative centers. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)