Abstract
Some localization effects in a 2D electron gas are reviewed, emphasizing the effects of an external magnetic field and a hydrostatic pressure on modulation doped GaAs/GaAlAs heterojunctions with a spacer.As a result of electron transfer in the quantum well controlled by the pressure, various effects are studied as a function of the surface electron density on the same sample.Three regimes are discussed, depending on the magnetic field intensity: the ultra quantum limit, the quantum limit - and the weak magnetic field limit.
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