Localization dynamics of exciton luminescence in InxGa1−xN epitaxial films

Abstract

Picosecond time resolved photoluminescence (PL) spectroscopy of excitonic processes in MOCVD grown InxG1−xN mixed films with the In concentration in range from x=0.1 to 0.18 under the band-to-band excitation are considered. It is stated that by an In content in alloy up to 12% the band-band photo excitation at 8 K results in creating of localized excitons and biexcitons represented by close overlapping Gaussian shape luminescence bands having FWHM 27 and 8.7 meV, respectively. PL decay kinetics of both bands involves two exponential decay stages. Excitons and biexcitons in unperturbed lattice positions causes fast decay with τ∼ 10 ps, whereas their transfer to the metastable state due to relaxation of In – Ga local configuration causes slow decay τ ∼ 90 ps At increased In content up to 19% both the localized excitons and biexcitons are represented by Gaussian type luminescence bands being non-uniform broadened to the high energy side. The continuous distribution of excitons and biexcitons in transition energies is stated by analysis of the red-shift of luminescence bands during the spectra decay. An additional new narrow low energy PL band arises at low energy side expected to be caused by excitons at InN clusters.