Localization and scaling in the quantum Hall regime.

Abstract

A new experimental study of the quantum Hall effect is presented. Detailed measurements are made of the temperature and magnetic field dependences in the electronic transport coefficients, ${\ensuremath{\sigma}}_{\mathrm{xx}}$ and ${\ensuremath{\sigma}}_{\mathrm{xy}}$, in ${\mathrm{In}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As-InP heterostructures for the n=0 and 1 Landau levels. The results are studied in the context of the (two-parameter) renormalization-group theory of the integral quantum Hall effect.