Abstract
The longitudinal ρxx(B, T) and Hall ρxy(B, T) resistances are experimentally investigated in n-InGaAs/GaAs nanostructures with a single and double quantum wells in the magnetic field range B = 0–2.5 T and temperatures T = 1.8–20 K. It is shown that the origin of the temperature-independent point located at ωcτ≅1 on the ρxx(B, T) curves is due to the combined action of the classical cyclotron motion and the quantum interference effects of weak localization and electron-electron interaction. The results obtained indicate that the transition from the dielectric phase to the phase of the quantum Hall effect is a crossover from weak localization (quantum interference effects in a weak magnetic field) to strong localization in quantizing magnetic fields in the quantum Hall effect regime.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Low Temperature Physics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
