Abstract
Under zone axis diffraction conditions, small changes in orientation cause large changes in fast electron probability density ψψ ∗ on specific crystallographic sites. X-ray fluorescence spectra for GaAs near the 〈111〉 zone axis orientation were obtained to provide a simple yet severe test as to whether differences in localization are measurable when Ga and As project onto equivalent sites for beams in the zeroth-order Laue zone. Differences in the K- to L-shell fluorescence ratio occur for both Ga and As when ψψ ∗ on the atoms is varied by an order of magnitude, as do the respective As/Ga ratios for K- and L-shell excitation. Experiment is found to compare favourably with calculations based on a fully dynamical 49-beam (e, 2e) model for ionization. The “interaction potential” is plotted as a function of distance, and an estimate of impact parameter obtained from the (e, 2e) model. The effect of HOLZ beams is also discussed.
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