Abstract
We have studied the effects of gamma-ray irradiation on Fourier transform infrared grazing incidence reflection–absorption (FTIR-GIRA) spectra of the GaN films grown on α-Al 2O 3 (0 0 0 1) substrates using the atmospheric pressure metal-organic chemical vapor deposition process. After gamma-ray irradiation, the intensities of FTIR-GIRA spectra are enhanced and a series of new absorption features appeared. Among them, those at 3440, 3355, 3088, 2819, 2712, 2100, 1426 and 894 cm −1 are discussed and identified. The reason why gamma-ray irradiation can enhance the intensities of and cause new features in FTIR-GIRA spectra of GaN films is discussed.
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