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Abstract
The local vibration modes of N-H bonds Fourier transform infrared spectrometry for GaAsN films grown by chemical beam epitaxy are investigated. Four stretching modes of N-H bonds exist in the films. The absorption intensities of stretching modes at 3125, 3098 and 2952 cm-1 have no relationships, suggesting that at least three kinds of N-H related defects are formed in the GaAsN films. Major stretching modes are 3098 and 2952 cm-1. The integrated absorption (IA) of 3098 cm-1 is proportional to H concentration ([H]). The IA of 2952 cm-1 changes super linearly with [H]. A simple N-H bond and a complex defect including N-H are suggested as the origin of 3098 and 2952 cm-1, respectively.
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