Abstract
In order to investigate the annealing temperature dependence of the tunnel magnetoresistance ratio (TMR) for ferromagnetic tunnel junction, the local transport properties were measured for Ta 5nm/Cu 20nm/Ta 5nm/Ni76Fe24 2nm/Cu 5nm/Mn75Ir25 10nm/Co71Fe29 4nm/Al-O junction with metal Al thickness of 0.8nm and oxidization time of 7s. The current histogram statistically calculated from the electrical current image was in good accordance with the fitting result considering the Gaussian distribution of barrier height and Fowler-Nordheim conductance. At high annealing temperature of 340°C, where the TMR ratio of the corresponding MTJ had the maximum value of 44%, the average barrier height φave increased to 1.12eV and the standard deviation σφ decreased to 0.1eV. The increase of TMR ratio after annealing was attributed to the increase of average barrier height and decrease of the barrier height variation. After further annealing at 360°C, the standard deviation σφ increased up to 0.2eV and the TMR decreased to 10%.
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