Abstract
Using laser power sweep Raman spectroscopy, this research reports that the thermal transport changes with the wire width of silicon-germanium (SiGe) nanowires (NWs). The temperature in SiGe NWs was calculated using the relationship between Raman shift ω and temperature T (d ω/d T) to evaluate the correlation between the thermal transport mechanism and SiGe NWs structure. We clarified that the thermal conductivity of the SiGe NWs decreases as the wire width becomes narrower. Also, a positional dependence of the thermal conductivity properties of the SiGe NWs was observed by laser power sweep Raman spectroscopy.
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