Abstract
Electronic properties of self-assembled InAs quantum dots (QDs) grown by molecular beam epitaxy have been investigated by atomic force microscopy (AFM) with conductive tip. The conductive AFM tip is brought to contact with QDs of various sizes, which are oxidized due to the sample transfer through the air, and current versus voltage ( I– V) characteristics are measured under forward bias condition. The obtained I– V curves indicate that the Schottky barrier is lower on large QDs of 70–90 nm diameter compared to that on small QDs of 30–40 nm diameter, i.e. the surface band structure is locally modified by the QDs. This modification is considered to be due to the positive surface charges on the InAs QDs which compensate for the negative surface states of the surrounding wetting layer.
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