Local structures around Mn atoms in MnxSi1-x thin films probed by fluorescence XAFS

Abstract

The local structure of the doped Mn in the MnxSi1-x dilute magnetic semiconductors (DMSs) fabricated by magnetron cosputtering method are studied by fluorescence X-ray absorption fine structure (XAFS) at Mn K-edge. It is found that the occupation of Mn atoms in the MnxSi1-x DMS strongly depends on the Mn content. The Mn K-edge XAFS results indicate that for the sample with low Mn content (x = 0.03∼0.08), the Mn atoms are incorporated into the lattice of Si, and substitute part of the Si sites. As the Mn content reaches 0.15, Mn atoms mainly form the phase of Mn1Si1 compound.