Abstract
Er-doped GaAs samples were grown by molecular beam epitaxy at 400°C and 590°C. The samples were investigated by photoluminescence (PL) and fluorescence extended X-ray absorption fine structure (EXAFS) measurements in order to find the relationship between the local structures around the Er atoms and the PL properties. Er-related PL peaks were observed only for the samples grown at a low temperature (400°C). The fluorescence EXAFS measurements showed the Er atoms were located on tetrahedral interstitial site when the growth temperature was low. On the other hand, when the growth temperature was high (590°C), the Er atoms substituted the Ga site in GaAs lattice.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
