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Abstract
The local structure of random In x Ga 1− x As alloys has been refined by fitting experimental high-resolution atomic pair distribution functions with the 8-atom unit cell of the zinc-blende lattice. Both metal and As atoms have been allowed to move off their ideal positions and so the local structural disorder due to the presence of two distinct bond lengths, Ga–As and In–As, has been quantified. It has been found that most of the disorder is accommodated by the As sublattice but the disorder on metal sites is important too. This new experimental information has been incorporated into a larger, statistically representative, model of In 0.5Ga 0.5As structure using widely available crystallographic software.
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