Abstract
Local structural information has been obtained from EXAFS and Laser Induced Mass Analysis (LIMA) of samples of porous silicon produced under various conditions, and these have been correlated with photoluminescence excitation spectra. There is evidence for the existence of disordered silicon-silicon bonds in porous silicon. The XANES show the existence of a feature in-between those assigned to SiSi and SiO bonding. LIMA indicates that the presence of SiOH correlates strongly with the strength of this peak. In addition, although porous silicon consists of a surface whose roughness is of the order of nanometres, it has been possible to obtain depth-profiling from reflected EXAFS (REFLEXAFS) from some samples. The REFLEXAFS XANES again show the additional feature, the strenght of which increases with the intensity of the SiSi peak, that is with depth.
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