Abstract
We investigated the local structure at the interface between titanium oxide (TiO x ) and crystalline Si (c-Si) with silicon oxide (SiOx) interlayers by employing the electron energy loss (EEL) spectroscopy to clarify the origin of the high performance TiO x passivating layer deposited by atomic layer deposition. Five kinds of TiO x /SiO x /c-Si structures were fabricated and the best passivation performance was achieved by the SiO x interlayer formed by nitric acid at room temperature. EEL spectra revealed that Ti-contained more stoichiometric SiO x including few oxygen vacancies and Ti-O-Si bonding would be formed after forming gas annealing, resulting in the enhancement of passivation performance.
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