Local structure of Ge2Sb2Te5 during crystallization under pressure

Abstract

The role of stress on the crystallization process of the phase change data storage material, Ge2Sb2Te5, is studied. When thin Ge2Sb2Te5 films are capped with Si3N4, stress is generated in the Ge2Sb2Te5 layer which causes the crystallization temperature to increase. Si3N4 films of 25 nm thickness increase the crystallization temperature from 446 K to 464 K. We show that stress predominantly destabilizes voids and increases the number of Ge-Sb and homopolar bonds in the vicinity of Ge atoms, and this makes the crystallization less probable, thus resulting in the increase in the measured temperature.