Abstract
Indium Oxynitride (InON) thin films prepared by Reactive gas-timing RF magnetron sputtering technique are investigated using X-ray absorption fine structure and first principle calculation. It was found from the former study[2] that optical and electrical properties of these films highly depended on its gas-timing ratio in the sputtering process. Therefore structural investigations of these films are required in order to describe the relation between the gas-timing ratio and their optical properties. The results show that local structure of the InON thin films consist of both indium oxide (In 2 O 3 ) and indium nitride (InN) phase.
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