Local structure investigation of Indium Oxynitride thin films by X-ray absorption fine structure

K Amnuyswat,P Thanomngam,S Sopitpan,A Sungthong,S Porntheeraphat,J Nukeaw

doi:10.1109/inec.2010.5424773

Local structure investigation of Indium Oxynitride thin films by X-ray absorption fine structure

K Amnuyswat, P Thanomngam + Show 4 more

https://doi.org/10.1109/inec.2010.5424773

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Publication Date: Jan 1, 2010

Citations: 3

Affiliation: King Mongkut's Institute of Technology Ladkrabang, National Science and Technology Development Agency

#Reactive Gas-timing RF Magnetron Sputtering #Indium Oxynitride + Show 8 more

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Abstract

Indium Oxynitride (InON) thin films prepared by Reactive gas-timing RF magnetron sputtering technique are investigated using X-ray absorption fine structure and first principle calculation. It was found from the former study[2] that optical and electrical properties of these films highly depended on its gas-timing ratio in the sputtering process. Therefore structural investigations of these films are required in order to describe the relation between the gas-timing ratio and their optical properties. The results show that local structure of the InON thin films consist of both indium oxide (In 2 O 3 ) and indium nitride (InN) phase.

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