Local structure in dilute nitrides probed by x-ray absorption spectroscopy

Abstract

We describe the use of x-ray absorption spectroscopy (XAS) with synchrotron radiation tostudy the local structure in dilute nitrides. After a brief description of the advantages ofXAS to probe local atomic arrangements in semiconductor alloys we focus our attention on(InGa)(AsN). We discuss data which demonstrate that atomic ordering (in the form of anexcess of In–N over Ga–N bonds) is present, but is significantly weaker than predicted;also, we show that the experimental values for the bond lengths are in agreementwith recent models which take into account strain due to pseudomorphic growth.