Abstract
We have studied the local structure around Zn atoms diffused into the GaAs crystal using the extended x-ray absorption fine structure method. Although Zn atoms are associated with vacancies at the first nearest neighbor (NN) sites, the first NN distance remains constant even where vacancies occur. Extra second NN atoms are located at a distance of 3.35 Å which is a bit less than the distance to position on a hexagonal site, and the third NN atoms are observed at a distance of 3.97 Å. From the above results, almost all Zn atoms occupy the substitutional site.
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