Abstract
Local strain evaluation was performed for single crystal Si pillar (SCSP) by micro Raman spectroscopy and photoluminescence (PL). SCSPs were fabricated by the mesa etching of Si-on-insulator followed by the etching of the buried oxide. The compressive strain was induced to SCSPs by SiN deposition using low-pressure chemical vapor deposition. The strain distribution was clearly observed in the plane of a certain pattern of SCSP. Strain ratio comparison was also performed for SCSPs with different shapes and sizes. Defect-related PL signals were also observed.
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