Abstract
Self-organized hexagonal GaN pyramids of 5μm width and covered by six {11̄01} side facets were investigated by spatially resolved cathodoluminescence and micro-Raman spectroscopy. Beside a narrow luminescence peak at 355nm, originating from the 2μm thick GaN layer, an additional broad luminescence band was observed from the GaN pyramids around a wavelength of 357nm. A strong energy shift is found along the {11̄01} pyramidal facets and directly visualized by monochromatic CL images and linescans. The effect of the thermal strain due to the mismatch of the thermal expansion coefficient of the various layers involved was analyzed by micro-Raman spectroscopy and by varying the temperature from 5K to room temperature. A strong impact of the free-carrier concentration on the local band gap and its temperature dependence was found.
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