Abstract
Local oxidation technique using atomic force microscope (AFM) was studied. The local oxidation of ferromagnetic metal thin films was successfully performed by AFM under both contact and dynamic force modes. Modification of magnetic and electrical properties of magnetic devices fabricated by the AFM oxidation was achieved. Capped oxide layers deposited on the ferromagnetic metal films are advantageous for stable oxidation due to hydrophilic surface of oxide. The oxide layer is also expected to prevent magnetic devices from degradation by oxidation of ferromagnetic metal. As for modification of magnetic property, the isolated region of CoFe layer formed by nanowires of CoFe-oxide exhibited peculiar characteristic attributed to the isolated magnetization property and pinning of domain wall during magnetization reversal. Temperature dependence of current-voltage characteristic of the planar-type tunnel junction consisting of NiFe/NiFe-oxide/NiFe indicated that the observed current was dominated by intrinsic tunneling current at the oxide barrier.
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