Abstract
The generation of dislocations at [100] nitride film edges on (001)Czochralski silicon wafers is studied by means of high voltage electron microscopy. After local oxidation 90° (edge) dislocations forming triangular half-loops with sides lying in [211̄] and [21̄1] directions in a (011) plane are found. It is observed that the shape of the surface stacking faults is also influenced by the mask orientation and that a denuded zone free from bulk defects is formed at the silicon surface. A novel model to explain the dislocation generation and movement under the influence of the stresses near the Si3N4 film edges is discussed.
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