Abstract
The oxidation characteristics of TiN thin films by atomic force microscopy (AFM) electrochemical nanolithography with multiwalled carbon nanotube tip was investigated. The TiN films were produced on silicon substrate by atomic layer chemical vapor deposition (ALCVD). The electrochemical parameters, such as anodized voltages, oxidation times, writing speeds, pulse voltage periods and how they affected the creation and growth of the oxide nanostructures were explored. The results showed that the height of the TiN oxide dots grew as a result of either the anodization time or the anodized voltage being increased. The oxide growth rate was dependent on the anodized voltage and on the resulting electric field strength. Furthermore, as the electric field strength was at an order of 2 × 10 7 V/cm, the anodization rate decreased quickly and the oxide dots stopped growing. Auger electron spectroscopy (AES) measurements confirm the modified structures took the form of anodized TiN.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
