Abstract
The local structure of porous silicon has been studied exciting its optical luminescence by X-rays (XEOL). The photoluminescence yield and the total electron yield (TEY), recorded simultaneously as a function of the X-ray energy at the Si K edge, give rise to the extended X-ray absorption fine structures (EXAFS). Analysis of EXAFS data confirms that the optical luminescence of porous Si originates from the nanocrystalline cores and shows that XEOL–EXAFS and TEY–EXAFS are sensitive to different Si local environment. It can be assumed that XEOL–EXAFS is related only to the light emitting sites while TEY–EXAFS is sampling both luminescent and non-luminescent Si sites.
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