Abstract

Electron spin resonance (ESR), and 71Ga and 75As nuclear magnetic resonance (NMR) measurements have been performed on a 20μ thick film of a-GaAs deposited on a SiO 2 substrate by molecular beam epitaxy. The ESR spectrum exhibits the four-line S= 1 2 , I= 3 2 hyperfine pattern characteristic of the singly ionized arsenic antisite defect (As Ga) commonly observed in crystalline GaAs. The concentration of As Ga centers is estimated to be 10 17−10 18 cm −3 which is 2–3 orders of magnitude higher than those typically found in as-grown (unirradiated) crystalline samples. 71Ga and 75As NMR linewidths suggest substantial quadrupole broadening due to slight deviations from crystalline bonding parameters, but with overall preservation of short-range tetrahedral order.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.