Abstract
Electron spin resonance (ESR), and 71Ga and 75As nuclear magnetic resonance (NMR) measurements have been performed on a 20μ thick film of a-GaAs deposited on a SiO 2 substrate by molecular beam epitaxy. The ESR spectrum exhibits the four-line S= 1 2 , I= 3 2 hyperfine pattern characteristic of the singly ionized arsenic antisite defect (As Ga) commonly observed in crystalline GaAs. The concentration of As Ga centers is estimated to be 10 17−10 18 cm −3 which is 2–3 orders of magnitude higher than those typically found in as-grown (unirradiated) crystalline samples. 71Ga and 75As NMR linewidths suggest substantial quadrupole broadening due to slight deviations from crystalline bonding parameters, but with overall preservation of short-range tetrahedral order.
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