Abstract

Defects introduced by oxygen implantation in silicon-doped GaAs layers grown by molecular beam epitaxy (MBE) have been investigated by Fourier transform infrared absorption spectroscopy at low temperatures. After rapid thermal annealing in the temperature range between 630 and 880/spl deg/C a local mode is observed at 641 cm/sup -1/. The line shows a shift with both the Si and O isotope (/sup 28/Si//sup 29/Si and /sup 16/O//sup 18/O, respectively) mass. Experimental evidence is presented that the silicon-oxygen defect giving rise to this line is responsible for the high-resistive behaviour of the MBE layer.

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