Abstract
AbstractInterfaces between Al and amorphous C or amorphous Sio2 were prepared by sputter deposition of the ceramic phases onto the sputter cleaned surfaces of large grain Al. In situ TEM was used to study the behavior of the extrinsic dislocations (slip traces) at the metal/ceramic interface formed by the motion of Al lattice dislocations which intersect the interphase boundary plane. The proximity of the extrinsic lattice dislocation to the metal/ceramic interface places this interphase boundary under a highly localized stress. Relaxation behavior of extrinsic defects at the interface region is a function of the defect standoff distance from the interface, image stress and the applied stress. An experimental technique is proposed to estimate the minimum shear stress the various interfacial regions are able to withstand. Research supported by the Department of Energy.
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