Abstract
Local interaction imaging of cleaved InAs surface (110) using a high aspect ratio (HAR) SiGe quantum dot (QD) probe was demonstrated by frequency-modulation mode noncontact atomic force microscopy under atmospheric pressure. The local contrast image with pronounced brightness is mainly attributed to no contact potential difference between the HAR SiGe-QD probe apex and the sample surface, and low frequency-change of the HAR SiGe-QD probe.
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