Local impact of Stone–Wales defect on a single layer GNRFET

Abstract

In this work, a new structure of single layer armchair graphene nanoribbon field effect transistor with the Stone–Wales (SW) defect (SWGNRFET) is studied. The simulations are solved with Poisson–Schrödinger equation self-consistently by using Non-Equilibrium Green Function (NEGF) and in the real space approach. The energy band structure is obtained by approximation tight-binding method. The results show that displacement of a defect in the width of the channel of the new structure is led to 50% increase in ION/IOFF ratio only by rotating of a C–C (Carbon–Carbon) bond with similar behavior. But, a remarkable increase of 300% in ION/IOFF ratio is obtained by a “dual center” defect. The results show that structure with defects in the middle of the channel, has the best performance of SWGNRFET. On the other hand, ION/IOFF ratio decreases when the defect moves from middle to the “near the drain” and “source”.