Abstract
A multi-terminal InAs-based lateral spin-valve tunnelling device is presented, which enables individual electrical characterization of all spin-valve components in two-terminal configuration. Both the spin-valve and the non-local geometry are available for studying spin-dependent transport. Furthermore, we propose a measurement geometry in which the spin-dependent contact resistance of the sensor electrode can be measured in three-terminal configuration. Longitudinal magnetoresistance in spin-valve geometry reveal hysteresis loops of 1 mΩ deflection as known from Hall magnetometry. In non-local geometry a polarity-dependent current–voltage characteristic at 2 K is observed. This can be understood in terms of a superposition of a diffusive resistive component with a polarity-dependent ballistic component.
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