Abstract

We used the $\mathit{GW}$ approximation to examine the improvements of the semiconducting gap in three predicted half-metals with the zincblende structure, CrAs, MnAs and MnC, compared to density-functional theory with the generalized gradient approximation. Recognizing the differences in the local field effect between transition metals and insulators, respectively, we modeled one spin channel in a half-metal as metallic having a $d$ character and the oppositely oriented spin channel as insulating. To demonstrate the necessity of treating these three compounds as having a $d$ character, we also applied the $\mathit{GW}$ approximation to CrAs using the nearly free electron model in the conducting channel. We found that CrAs shows the least improvement, while Mn-based half-metals exhibit comparable improvements. Physical explanations for these results are presented.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.