LOCAL ELECTRONIC STATES ON TWO-DIMENSIONAL NANOSCALE ISLAND OF Si AND Ge FABRICATED ON Si(111) 7 × 7 SUBSTRATE

Abstract

Nanoscale islands on semiconductor are a strong candidate as building block in nanodevices. In the nanoisland, some local deformation is induced by the surface tension, which has a great influence on the electronic property of the nanoislands. To study the electronic structure of two-dimensional (2D) nanoislands of Si and Ge on the Si(111) 7 × 7 surface, we formed nanoislands of the same size and measured with angle resolved ultraviolet photoelectron spectroscopy (ARUPS), scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). We found that the nanoisland shows a characteristic fine structure due to some strain. We also calculated a relation between the strain and electronic state based on the density-functional theory. In the calculation, the dangling-bond state at the strained adatom on the nanoisland (SR state) shifts to lower energy, which has liner dependence with the height of the adatoms. The ARUPS spectrum and the STS show characteristic peaks corresponding to the SR state, whose energy depends on the deformation of the adatom. The height of the adatom on the nanoisland estimated from the energy difference is consistent with a result of the STM measurement. The strain of adatoms can be estimated from the electronic structure.