Abstract
We investigate local electronic properties of cadmium telluride solar cells using electron beam induced current (EBIC) measurements with patterned contacts. EBIC measurements are performed with a spatial resolution as high as ≈20nm both on the top surface and throughout the cross-section of the device, revealing a remarkable degree of electrical inhomogeneity near the p–n junction and enhanced carrier collection in the vicinity of grain boundaries (GB). Simulation results of low energy EBIC suggest that the band bending near a GB is downward, with a magnitude of at least 0.2eV for the most effective current-collecting GBs. Furthermore, we demonstrate a new approach to investigate local open-circuit voltage by applying an external bias across electrical contact with a point electron-beam injection. The length scale of the nanocontacts is on the length scale of a single or a few grains, confining current path with highly localized photo-generated carriers.
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