Local electrical characteristic of memristor structure in a high-resistance state obtained using electrostatic force microscopy: Fractal and multifractal dynamics of surface

Abstract

A heterostructure BiFeO3/TiO2(Nt)Ti (BFOT) was obtained by the atomic layer deposition (ALD) method. After thermal treatment, the redistribution of Fe/Ti atoms forms an Aurivillius intermediate layered phase, and local charge capture centers are formed in the sample. Due to cationic non-stoichiometry, the BFO film exhibits p-type conductivity, while the nanotubes exhibit n-type conductivity due to oxygen vacancies. It was observed that lateral displacement of the sample can lead to ferroelectric switching, which can, in turn, affect the transition of the memristive structure from high-resistance (HRS) to low-resistance states (LRS). The hysteresis suppression tends to transition to an ohmic character and depends on the amplitude, frequency, and duration of the periodic signal. It has been found that compensation of static charge during resistive switching can affect the transport properties of the material. Fractal dimension analysis showed an acceleration of structure restructuring with increasing voltage, possibly contributing to the transition from an insulator to a metal in certain areas of the film volume. The joint analysis of piezoresponse force microscopy (PFM), electrostatic force microscopy (EFM), and fractal/multifractal dynamics showed a correlation between surface static charge and piezopotential. The new methodology described in this work can help understand the resistive switching processes in ferroelectric/semiconductor memristive structures.