Abstract
Unusually strong inhomogeneities of the impurity conductivity in compensated ZnS and GaAs crystals are reported. It is shown that these inhomogeneities are due to different energies of ionization of the impurities in different parts of the sample. Such differences are also found in different samples of one single crystal. The inhomogeneity of the conductivity is investigated using a capacitive method of measurement described in this paper. Es wird uber ungewohnlich starke Inhomogenitat der Storstellenleitung in kompensierten ZnS- und GaAs-Kristallen berichtet. Diese Inhomogenitat wird durch Unterschiede der Ionisierungsenergie der Storstellen in verschiedenen Bereichen der Probe erklart. Solche Unterschiede werden auch an verschiedenen Proben ein und desselben Einkristalls direkt nachgewiesen. Zur Untersuchung der Leitfahigkeitsinhomogenitat wird eine kapazitive Mesmethode angewendet und beschrieben.
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