Abstract
The microscopic structural and electrical properties of few-layer graphene grown on an SiCsubstrate were characterized by low-energy electron microscopy, transmission electronmicroscopy and scanning probe microscopy measurements of local conductance. Thedouble-layer graphene sheet was confirmed to be continuous across the atomic steps on theburied SiC substrate surface, and the measured local conductance was clearly modified inthe vicinity of the steps. The conductance decreased (slightly increased) at the lower(upper) side of the steps, suggesting deformation-induced strain is the origin of theconductance modification. From the contact force dependence of the conductance images,the effective contact areas for both nanogap-probe and point-probe measurements wereestimated.
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