Abstract
Positive and negative charges are stored locally in thin films of silicon oxide on silicon by applying a voltage between an AFM cantilever tip and the silicon substrate. The stored charges are displayed by Kelvin probe force microscopy (KPFM). The process of charge storing is investigated with respect to different dwell times and different voltages. The amount of stored charges increases both with applied voltage and dwell time. A decay mechanism of the charges with two different time regimes is discussed. A fast decay is attributed to a migration parallel to the surface, while the second one is dominated by a transport perpendicular to the substrate surface.
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