Abstract
Short range ordering is compared in three amorphous III-V compounds: InP, GaP and GaAs. For a-InP and a-GaP, a high degree of chemical disorder is evident from an extended X-ray absorption fine structure (EXAFS) study. In the case of a-GaAs, the three partial pair distribution functions deduced from anomalous X-ray diffraction experiments indicate strong chemical ordering. A joint analysis of EXAFS and anomalous X-ray diffraction data reveals the presence of threefold coordinated As which is shown to play an important role in the relaxation of the network as demonstrated by the anomalous X-ray diffraction measurements.
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