Abstract
We have investigated the effect of hydrostatic pressure on coupled longitudinal optical (LO)-phonon-plasmon modes and Fermi energies in heavily doped n-GaAs and n-InP using Raman scattering and photoluminescence (PL) spectroscopy at T = 6 K. The combined Raman and PL data allow us to determine both the free carrier density and electron effective mass of the Γ conduction band minimum as a function of pressure. Near the pressure-induced Γ-X conduction band crossover both materials exhibit striking changes in the coupled mode frequencies, which are caused by the transfer of electrons from Γ to X minima. The onset pressure of the electron transfer in n-InP is used to determine the Γ-X crossover pressure P c = 11.1 ± 0.4 GPa, in undoped InP.
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