Abstract
The low temperature fabrication of OFET (organic field effect transistor) on the flexible polymer substrate is presented in this paper. A drop-on-demand (DOD) ink-jetting system was used to print gold nano-particles suspended in Alpha-Terpineol solvent, PVP (poly-4-vinylphenol) in PGMEA (propylene glycol monomethyl ether acetate) solvent, semiconductor polymer (modified polythiophene) in dichlorobenzene (o-DCB) solution to fabricate OFET on flexible polymer substrates. Short pulsed laser ablation enabled finer electrical components to overcome the resolution limitation of inkjet deposition. Continuous Argon ion laser was irradiated locally to evaporate carrier solvent as well as to sinter gold nano-particles. In addition, a new selective ablation of multilayered gold nanoparticle film was demonstrated using the SPLA-DAT (selective pulsed laser ablation by differential ablation threshold) scheme for sintered and non-sintered gold nanoparticles. Finally, selective ablation of multilayered film was used to define narrow channel of a FET (field effect transistor) and semiconductor polymer solution was deposited on top of channel to complete OFET (organic field effect transistor) fabrication.
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