Lithography process simulation studies using coarse-grained polymer models

Abstract

Lithography processes were modeled on the basis of coarse-grained polymer simulation techniques using OCTA, which is the simulation software for soft materials, and the simulations of these processes were performed to clarify the mechanism of the polymer chain dynamics in lithography processes. In the case of the top-down process, the development and rinse processes were modeled using a dissipative particle dynamics method. From our series of simulations, the line pattern constituted by resist polymers can be simulated as a result. In the rinse process, the reduction of line edge roughness (LER) can be found, and the importance of the rinse process to modify the LER was identified. The bottom-up process, which is called the directed self-assembly (DSA) process, can also be simulated. From our DSA process simulations, the polymer chain dynamics in the defect annihilation process can be analyzed. The lithography process simulations modeled by coarse-grained polymer techniques are reviewed. As a case of top-down process, development and rinse processes were simulated. From these simulations, line edge structure can be obtained to discuss the line edge roughness. As a case of bottom-up process, the directed self-assembly (DSA) process was simulated, and the polymer chain dynamics in the defect annihilation process can be analyzed.